Raytheon achieves major milestone with GaN

Next-generation gallium nitride (GaN) radio frequency (RF) semiconductor technology improved with diamond

Raytheon achieves major milestone with GaN

Sophisticated research on gallium nitride continues today at the Radio Frequency Components Foundry in Andover, Mass. (Photo courtesy of Raytheon)

By Military1 Staff

Raytheon recently hit a significant milestone for next-generation gallium nitride (GaN) radio frequency (RF) semiconductor technology. Through the Defense Advanced Research Projects Agency (DARPA), GaN’s current substrate, Silicon Carbide, is being replaced with diamond. This material will have three to five times higher thermal conductivity, the company said.

With diamond technology, GaN increases its transistor power density over GaN on Silicon Carbide, the company said. Data was obtained on a 10X125um GaN on diamond HEMT. This is a device representing a unit cell for constructing the foundation of solid-state RF transmitters and active electronically scanned arrays.

In addition, Raytheon announced it systematically has matured GaN from basic material to transistors, MMICs, transmit/receive (T/R) modules, and transmit/receive integrated multichannel modules (TRIMMs).